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  Datasheet File OCR Text:
 SMD Type
Transistors
NPN Silicon Planar High Voltage Transistor FZT658
SOT-223
6.50
+0.2 -0.2
Unit: mm
+0.2 3.50-0.2
0.1max +0.05 0.90-0.05
Features
400 Volt VCEO Low saturation voltage
+0.1 3.00-0.1
+0.2 0.90-0.2 +0.3 7.00-0.3
4
1 Base
1 2 2.9 4.6 3
+0.1 0.70-0.1
2 Collector 3 Emitter 4 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating 400 400 5 1 0.5 2 -55 to +150 Unit V V V A A W
+0.15 1.65-0.15
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1
SMD Type
FZT658
Electrical Characteristics Ta = 25
Parameter Breakdown Voltage Breakdown Voltage Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC=100iA IC=10mA* IE=100iA VCB=320V VEB=4V IC=20mA, IB=1mA* Collector-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA* IC=100mA, IB=10mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(sat) VBE(on) IC=100mA, IB=10mA* IC=100mA, VCE=5V* IC=1mA, VCE=5V* Static Forward Current Transfer Ratio hFE IC=100mA, VCE=5V* IC=200mA, VCE=10V* Transition Frequency Output Capacitance Switching Times fT Cobo ton toff IC=10mA, VCE=20V,f=20MHz VCB=20V, f=1MHz IC=100mA, VCC=100V IB1=10mA, IB2=-20mA 50 50 40 50 Testconditons Min 400 400 5
Transistors
Typ.
Max
Unit V V V
100 100 0.3 0.25 0.5 0.9 1.0
nA nA V V V V V
MHz 10 130 3300 pF ns ns
* Measured under pulsed conditions. Pulse Width=300is. Duty cycle 2%
Marking
Marking FZT658
2
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